1. Material Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms organized in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting remarkable atomic bond stamina.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is amongst the toughest in structural ceramics, giving impressive thermal security, hardness, and resistance to chemical attack.
This durable covalent network leads to a material with a melting point exceeding 2700 Ā° C(sublimes), making it one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical stamina and creep resistance at temperature levels over 1400 Ā° C, where many metals and traditional porcelains begin to soften or degrade.
Its reduced coefficient of thermal growth (~ 4.0 Ć 10 ā»ā¶/ K) incorporated with high thermal conductivity (80– 120 W/(m Ā· K)) allows rapid thermal cycling without tragic splitting, a vital feature for crucible performance.
These inherent buildings stem from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote a highly stable and densely loaded crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in toughness and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperatures over 2000 Ā° C, commonly with boron or carbon ingredients to enhance densification and grain limit communication.
This process produces a totally thick, fine-grained structure with marginal porosity (
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