1. Crystallography and Product Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its remarkable polymorphism– over 250 known polytypes– all sharing solid directional covalent bonds yet varying in piling sequences of Si-C bilayers.
One of the most technologically pertinent polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal forms 4H-SiC and 6H-SiC, each displaying refined variants in bandgap, electron mobility, and thermal conductivity that influence their viability for specific applications.
The toughness of the Si– C bond, with a bond power of roughly 318 kJ/mol, underpins SiC’s amazing hardness (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
In ceramic plates, the polytype is commonly selected based upon the intended use: 6H-SiC is common in structural applications because of its convenience of synthesis, while 4H-SiC dominates in high-power electronic devices for its premium cost provider flexibility.
The vast bandgap (2.9– 3.3 eV depending upon polytype) likewise makes SiC an outstanding electric insulator in its pure kind, though it can be doped to function as a semiconductor in specialized digital tools.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural features such as grain size, thickness, stage homogeneity, and the presence of secondary stages or impurities.
Top quality plates are generally produced from submicron or nanoscale SiC powders with innovative sintering methods, resulting in fine-grained, fully thick microstructures that maximize mechanical toughness and thermal conductivity.
Impurities such as cost-free carbon, silica (SiO TWO), or sintering aids like boron or aluminum must be carefully controlled, as they can form intergranular films that lower high-temperature toughness and oxidation resistance.
Recurring porosity, also at low degrees (
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